FACTS ABOUT GERMANIUM REVEALED

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the composition is cycled as a result of oxidizing and annealing levels. Due to preferential oxidation of Si in excess of Ge [68], the initial Si1–This Web-site employs cookies to provide a few of our services and products in